NTD4806N-1G Просмотр технического описания (PDF) - ON Semiconductor
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NTD4806N-1G Datasheet PDF : 8 Pages
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NTD4806N
TYPICAL PERFORMANCE CURVES
100
90
80
70
60
50
40
30
20
10
0
0
10 V
6V
5V
4.5 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
1
2
3
4
5
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 1. On--Region Characteristics
160
150 VDS ≥ 10 V
140
130
120
110
100
90
80
70
60
50
40
TJ = 125°C
30
20
TJ = 25°C
10
0
TJ = --55°C
0
1
2
3
4
5
6
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.048
0.043
0.038
ID = 30 A
TJ = 25°C
0.033
0.028
0.023
0.018
0.013
0.008
0.003
3
4
5
6
7
8
9
10
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
0.015
TJ = 25°C
0.010
0.005
VGS = 4.5 V
VGS = 11.5 V
0
50 55 60 65 70 75 80 85 90
ID, DRAIN CURRENT (AMPS)
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
2.0
ID = 30 A
VGS = 10 V
1.5
100,000
VGS = 0 V
10,000
TJ = 175°C
1.0
1000
TJ = 125°C
0.5
100
0
--50 --25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On--Resistance Variation with
Temperature
10
5
10
15
20
25
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
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