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ISP620-1X Просмотр технического описания (PDF) - Isocom

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Компоненты Описание
производитель
ISP620-1X Datasheet PDF : 3 Pages
1 2 3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
55V
6V
50mA
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.0 1.15 1.3 V
IF = ± 10mA
Output
Collector-emitter Breakdown (BVCEO) 55
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (ICEO)
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP620-1, ISP620-2, ISP620-4
50
CTR selection available GB
100
30
Collector-emitter Saturation VoltageVCE (SAT)
GB
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance R 5x1010
ISO
Rise Time, tr
4
Fall Time, tf
3
V
V
100 nA
600 %
600 %
%
0.4 V
0.4 V
VRMS
VPK
Ω
μs
μs
IC = 0.5mA
I = 100μA
E
VCE = 20V
± 5mAIF , 5V VCE
± 5mAIF , 5V VCE
± 1mAIF , 0.4V VCE
± 8mAIF , 2.4mAIC
± 1mAIF , 0.2mAIC
See note 1
See note 1
V = 500V (note 1)
IO
VCE = 2V ,
I = 2mA, R = 100Ω
C
L
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
17/7/08
DB92101m-AAS/A4

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