CXA3170AN Просмотр технического описания (PDF) - Sony Semiconductor
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CXA3170AN Datasheet PDF : 18 Pages
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CXA3170AN
Unless otherwise specified, VCC=5 V, Ta=25 °C, fWD (Write data frequency) =5 MHz, IW=15 mA, LH (Head
inductance) =1 µH, RH (Head DC resistance value) =30 Ω
Refer to Fig. 2 to Fig. 4
No.
Item
Symbol
Measurement conditions
Min. Typ. Max. Unit
Head differential
14
voltage amplitude
Differential voltage between HX pin and HY pin
VSW
at switching of Write current
9
Vp-p
TRW is the time required for Write current to turn
Mode switching time
15-1
TRW to 90 % after Pin 23 changes from “High” to
Read to Write
“Low”.
130 150 ns
TWR1 is the time required for the Read amplifier
TWR1 output∗ to turn to 90 % after Pin 23 changes
180 220 ns
Mode switching time
15-2
Write to Read
from “Low” to “High”.
TWR2 is the time required for Write current to
TWR2 decreases to 10 % after Pin 23 changes from
100 200 ns
“Low” to “High”.
TSA1 is the time required for Pin 14 to turn
Mode switching time
16-1
TSA1 “High” after the last transition of Write data
safe to unsafe
when Write data is stopped in Write mode.
1.0 2.3 3.0 µs
TSA2 is the time required for Pin 14 to turn “Low”
Mode switching time
16-2 unsafe to safe
TSA2
after the first transition of Write data in Write
mode.
0.6 µs
TH is the time required for the Read amplifier
17 Head switching time TH output∗ to reach 90 % when the selected head
switched in Read mode.
0.6 µs
Write current
18 propagation delay
time
TPD is the time required for Write current to
TPD
reach 90 % after the Write data falling edge.
2 7 ns
Write current
19-1
rise/fall time
TR/TF
TR is the time required for Write current to reach
90 % from 10 %; TF is the same time required
to reach 10 % from 90 %. LH=0 µH, RH=0 Ω
1 3 ns
LH=540 nH, RH=25 Ω, IW=10 mA
Write current
19-2
rise/fall time
TR is the time required for Write current to reach
TR/TF
3.7
ns
90 % from 10 %; TF is the same time required
to reach 10 % from 90 %.
∗Read amplifier output 100 mVp-p 10 MHz
—9—
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