CXA3090N Просмотр технического описания (PDF) - Sony Semiconductor
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CXA3090N Datasheet PDF : 17 Pages
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CXA3090N
Unless otherwise specified, VCC=5 V, Ta=25 °C, fWD (Write data frequency) =5 MHz, IW=15 mA, LH (Head
inductance) =1 µH, RH (Head DC resistance value) =30 Ω
Refer to Fig. 2 to Fig. 4
No.
Item
Symbol
Measurement conditions
Min. Typ. Max. Unit
Head differential
14
voltage amplitude
Differential voltage between HX pin and HY pin
VSW
5.8 6.8
at switching of Write current (open Head)
Vp-p
TRW is the time required for Write current to turn
Mode switching time
15-1
TRW to 90 % after Pin 23 changes from “High” to
Read to Write
“Low”.
0.2 0.4 µs
TWR1 is the time required for the Read amplifier
TWR1 output∗ to turn to 90 % after Pin 23 changes
0.3 0.5 µs
Mode switching time
15-2
Write to Read
from “Low” to “High”.
TWR2 is the time required for Write current to
TWR2 decreases to 10 % after Pin 23 changes from
0.2 0.4 µs
“Low” to “High”.
TSA1 is the time required for Pin 14 to turn
Mode switching time
16-1
TSA1 “High” after the last transition of Write data
safe to unsafe
when Write data is stopped in Write mode.
1.5 3 5 µs
Mode switching time
TSA2 is the time required for Pin 14 to turn “Low”
16-2 unsafe to safe
TSA2 after the first transition of Write data in Write
mode.
0.6 µs
17 Head switching time TH TH is the time required for the Read amplifier
output∗ to reach 90 % when the selected head
Write current
switched in Read mode.
18 propagation delay
TPD TPD is the time required for Write current to
time
reach 90 % after the Write data falling edge.
Write current
19
rise/fall time
TR/TF
LH=0 µH, RH=0 Ω
TR is the time required for Write current to reach
90 % from 10 %; TF is the same time required
0.6 µs
2 7 ns
1 3 ns
∗Read amplifier output 100 mVp-p 10 MHz
—8—
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