HGTD6N40E1 Просмотр технического описания (PDF) - Intersil
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HGTD6N40E1 Datasheet PDF : 4 Pages
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Specifications HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current
Collector-Emitter On-Voltage
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation =
WOFF x Frequency)
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation =
WOFF x Frequency)
Thermal Resistance Junction-to-
Case (IGBT)
SYMBOL
TEST CONDITIONS
BVCES IC = 250µA, VGE = 0V
VGE(TH)
ICES
IGES
VCE(ON)
VGEP
QG(ON)
tD(ON)
tR
tD(OFF)
tF
WOFF
VGE = VCE, IC = 1mA
TJ = +150oC, VCE = 400V
TJ = +150oC, VCE = 500V
VGE = ±20V, VCE = 0V
TJ = +150oC, IC = 3A, VGE = 10V
TJ = +150oC, IC = 3A, VGE = 15V
TJ = +25oC, IC = 3A, VGE = 10V
TJ = +25oC, IC = 3A, VGE = 15V
IC = 3A, VCE = 10V
IC = 3A, VCE = 10V
Resistive Load, IC = 3A,
VCE = 400V, RL = 133Ω,
TJ = +150oC, VGE = 10V,
RG = 25Ω
tD(OFF)I
tFI
WOFF
Inductive Load (See Figure 11),
IC = 3A, VCE(CLP) = 400V,
RL = 133Ω, L = 50µH, TJ = +150oC,
VGE = 10V, RG = 25Ω
RθJC
LIMITS
HGTD6N40E1 HGTD6N50E1
HGTD6N40E1S HGTD6N50E1S
MIN MAX MIN MAX
400
-
500
-
2.0
4.5
2.0
4.5
-
250
-
-
-
-
-
250
-
100
-
100
-
2.9
-
2.9
-
2.5
-
2.5
-
2.5
-
2.5
-
2.4
-
2.4
6.5 (Typ)
6.9 (Typ)
90 (Typ)
32 (Typ)
24 (Typ)
1100 (Typ)
0.29 (Typ)
-
190
-
190
-
1
-
1
-
0.43
-
0.43
-
2.08
-
2.08
UNITS
V
V
µA
µA
nA
V
V
V
V
V
nC
ns
ns
ns
ns
mJ
ns
µs
mJ
oC/W
Typical Performance Curves
7.5
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
6.0 DUTY CYCLE < 2%
4.5
3.0
1.5
TC = +150oC
TC = +25oC
TC = -55oC
0.0
0
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
7.5
VGE = 15V
6.0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = +25oC
VGE = 10V
VGE = 7.5V
4.5
VGE = 7.0V
VGE = 6.5V
3.0
VGE = 6.0V
1.5
VGE = 5.5V
VGE = 5.0V
0.0
0
2
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
1971
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