TC429EPA Просмотр технического описания (PDF) - TelCom Semiconductor Inc => Microchip
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TC429EPA Datasheet PDF : 7 Pages
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6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
TC429
TYPICAL CHARACTERISTICS
Rise/Fall Times vs. Supply Voltage
60
TA = +25°C
CL = 2500pF
50
40
30
tF
Rise/Fall Times vs. Temperature
60
CL = 2500pF
VDD = +15V
50
40
tF
30
tR
Rise/Fall Times vs. Capacitive Load
100
TA = +25°C
VDD = +15V
tF
tR
10
20
tR
20
10
5
10
15
20
SUPPLY VOLTAGE (V)
Supply Current vs. Capacitive Load
70
TA = +25°C
60 VDD = +15V
50
40
30
20
10
0
10
400kHz
200kHz
20kHz
100
1K
10K
CAPACITIVE LOAD (pF)
10
–50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
Delay Times vs. Temperature
90
CL = 2500pF
VDD = +15V
80
1
100
1K
10K
CAPACITIVE LOAD (pF)
Delay Times vs. Supply Voltage
140
TA = +25°C
CL = 2500pF
120
70
100
tD2
60
80
50
tD1
60
40
40
–50 –25 0 25 50 75 100 125 150
5
TEMPERATURE (°C)
tD2
tD1
10
15
20
SUPPLY VOLTAGE (V)
Supply Current vs. Frequency
50
TA = +25°C
CL = 2500 pF
10V
40
Supply Current vs. Supply Voltage
4
TA = +25°C
RL = ∞
INPUT LOGIC "1"
Supply Current vs. Temperature
4
VDD = +18°C
RL = ∞
INPUT LOGIC "1"
15V
30
2
VDD = 18V
3
20
10
5V
0
2
1
10
100
1K 0
4
8
12
16
20
–75 –50 –25 0 25 50 75 100 125 150
FREQUENCY (kHz)
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
Voltage Transfer Characteristics
20
TA = +25°C
15
HYSTERESIS
Ϸ310mV
300mV
10
200mV
5
High Output Voltage vs. Current
400
TA = +25°C
Low Output Voltage vs. Current
400
TA = +25°C
300
300
VDD = 5V
200
10V
15V
200
100
18V
100
VDD = 5V
10V 15V
18V
4-180
0 0.25 0.50 0.75 1 1.25 1.50 1.75 2
INPUT VOLTAGE (V)
0
20 40 60 80 100
0
CURRENT SOURCED (mA)
20 40 60 80 100
CURRENT SUNK (mA)
TELCOM SEMICONDUCTOR, INC.
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