CR6PM Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CR6PM Datasheet PDF : 5 Pages
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MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
16
14
θ = 30°
180°
12
120°
90°
10
60°
8
6
4
θθ
2
360°
0
RESISTIVE LOADS
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
16
14
θ = 30°
60°
12
10
DC
270°
180°
120°
90°
8
6
θ
4
360°
RESISTIVE,
2
INDUCTIVE
0
LOADS
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
140
θθ
120
360°
100
RESISTIVE LOADS
80
60
θ = 30°
90° 180°
40
60° 120°
20
0
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
60
θ = 30° 90° 180° DC
40
60° 120° 270°
20
0
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
Tj = 125°C
140
TYPICAL
EXAMPLE
120
IGT (25°C)
# 1 4.7mA
100
# 2 7.2mA
80
#2
60
40
#1
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999
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