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NGD15N41CLT4 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
NGD15N41CLT4
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NGD15N41CLT4 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
VGE = 10 V
50
40
30 TJ = 25°C
5V
4.5 V
4V
3.5 V
20
3V
10
2.5 V
0
0
1
2
3
4
5
67
8
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
60
VGE = 10 V
50
40 TJ = 150°C
30
20
10
5V
4.5 V
4V
3.5 V
3V
2.5 V
0
0
1
2
3
4
5
67
8
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 3. Output Characteristics
60
VGE = 10 V
50
5V
40
4.5 V
4V
30 TJ = −40°C
3.5 V
20
3V
10
2.5 V
0
0
1
2
3
4
5
67
8
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
30
VCE = 10 V
25
20
15
10
TJ = 25°C
5
TJ = 150°C
TJ = −40°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
4.0
3.5
VGE = 5 V
3.0
2.5
2.0
1.5
1.0
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 5 A
0.5
0.0
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
3
2.5
IC = 15 A
2
IC = 10 A
1.5
IC = 5 A
TJ = 25°C
1
0.5
0
3
4
5
6
7
8
9
10
GATE TO EMITTER VOLTAGE (VOLTS)
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
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