NDD01N60T4G Просмотр технического описания (PDF) - ON Semiconductor
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NDD01N60T4G Datasheet PDF : 8 Pages
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NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
10
350
QT
300
Ciss
8
VDS
250
10
Coss
VGS = 0 V
Crss
TJ = 25°C
f = 1 MHz
1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
6 Qgs
Qgd
200
4
150
VDS = 300 V
100
2
TJ = 25°C
ID = 400 mA
50
0
0
0
1
2
3
4
5
6
78
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
VDS = 300 V
ID = 400 mA
VGS = 10 V
tf
10 td(off)
tr
td(on)
3.5
3.0
VGS = 0 V
TJ = 25°C
2.5
2.0
1.5
1.0
0.5
1
0.1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
10
VGS = 10 V
Single Pulse
TC = 25°C
TJ = 150°C
1
10 ms
100 ms
10
RDS(on) Limit
Thermal Limit
Package Limit
1
1 ms 100 ms
1 ms
10 ms
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
dc
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area NDD01N60
10 ms
0.1
0.01
0.1
VGS = 10 V
Single Pulse
TC = 25°C
TJ = 150°C
1
10
dc
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDT01N60
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