NDS356P Просмотр технического описания (PDF) - Fairchild Semiconductor

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NDS356P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics (continued)

5

TJ= -55°C

4

25°C

3

125°C

2

1

VDS = -5V

0

0

-2

-4

-6

-8

-10

I D , DRAIN CURRENT (A)

Figure 13. Transconductance Variation with

Drain Current and Temperature

20

10

5

1

0.2

0.1

0.05

0.02

0.01

0.1

RDS(ON) LIMIT

VGS = -10V

SINGLE PULSE

TA = 25°C

100us

1ms

10ms

100ms

D1C10ss

0.2

0.5

1

2

5

10

20 30

- V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 14. Maximum Safe Operating Area

1

0.5

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.005

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.002

0.001

0.0001

0.001

0.01

0.1

1

t1 , TIME (sec)

R θJA (t) = r(t) * RθJA

R θJA = 250 °C/W

P(pk)

t1

t2

TJ - TA = P * R θJA (t)

Duty Cycle, D = t1 /t2

10

100

300

Figure 15. Transient Thermal Response Curve

Note : Characterization performed using the conditions described in note 1c. Transient thermal response will

change depending on the circuit board design.

NDS356P Rev. E1

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