NDS335 Просмотр технического описания (PDF) - Fairchild Semiconductor
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NDS335 Datasheet PDF : 6 Pages
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Typical Electrical Characteristics (continued)
1.12
ID = 250µA
1.08
1.04
1
0.96
0.92
-50
-25
0
25
50
75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature.
1
VGS = 0V
0.1
0.01
0.001
TJ = 125°C
25°C
-55°C
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
600
400
C iss
200
100
50
f = 1 MHz
20
VGS = 0V
C oss
C rss
10
0.1
0.2
0.5
1
2
5
10
20
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Capacitance Characteristics.
5
ID = 1.7A
4
3
VDS = 5V
10V
15V
2
1
0
0
2
4
6
8
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDS335 Rev.C
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