NDS335N Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
NDS335N Datasheet PDF : 6 Pages
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Typical Electrical Characteristics
5
VGS =4.5V
3.0
4 2.7
2.5
2.0
3
2
1.5
1
0
0
0.4
0.8
1.2
1.6
2
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.75
1.5
VGS= 2.0V
1.25
1
0.75
2.5
2.7
3.0
3.5
4.5
0.5
0
1
2
3
4
5
ID , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.8
ID = 1.7A
1.6 VGS = 2.7V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
5
VDS = 5.0V
4
T = -55°C
J
25°C
125°C
3
2
1
0
0
0.5
1
1.5
2
2.5
3
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.75
V = 2.7 V
GS
1.5
TJ = 125°C
1.25
25°C
1
-55°C
0.75
0.5
0
1
2
3
4
5
ID , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25
VDS= V GS
I D = 250µA
0
25
50
75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation
with Temperature.
NDS335 Rev.C
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