NDS0605 Просмотр технического описания (PDF) - Fairchild Semiconductor
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NDS0605 Datasheet PDF : 5 Pages
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July 2002
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-
state resistance, provide rugged and reliable
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
180mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
Features
• −0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V
• Voltage controlled p-channel small signal switch
• High density cell design for low RDS(ON)
• High saturation current
D
D
SOT-23
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
Maximum Power Dissipation
Derate Above 25°C
(Note 1)
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
65D
NDS0605
7’’
G
S
Ratings
−60
±20
−0.18
−1
0.36
2.9
−55 to +150
300
350
Tape width
8mm
Units
V
V
A
W
mW/°C
°C
°C
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
NDS0605 Rev B1(W)
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