NCV898031(2012) Просмотр технического описания (PDF) - ON Semiconductor
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NCV898031 Datasheet PDF : 13 Pages
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NCV898031
ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol
Conditions
Min Typ Max Unit
GATE DRIVER
Sourcing current
Sinking current
Driving voltage dropout
Driving voltage source current
Backdrive diode voltage drop
Driving voltage
UVLO
Isrc
Isink
Vdrv,do
Idrv
Vd,bd
VDRV
VDRV ≥ 6 V, VDRV − VGDRV = 2 V
VGDRV ≥ 2 V
VIN − VDRV, IvDRV = 25 mA
VIN − VDRV = 1 V
VDRV − VIN, Id,bd = 5 mA
IVDRV = 0.1 − 25 mA
600 800
−
mA
500 600
−
mA
−
0.3
0.6
V
35
45
−
mA
−
−
0.7
V
6.0
6.3
6.6
V
Undervoltage lock−out,
Threshold voltage
Vuvlo
VIN falling
2.95 3.05 3.15
V
Undervoltage lock−out,
Hysteresis
Vuvlo,hys
VIN rising
50
150 250
mV
THERMAL SHUTDOWN
Thermal shutdown threshold
Thermal shutdown hysteresis
Thermal shutdown delay
Tsd
Tsd,hys
tsd,dly
TJ rising
TJ falling
From TJ > Tsd to stop switching
160 170 180
°C
10
15
20
°C
−
−
100
ns
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