NCV8772BD5S(2011) Просмотр технического описания (PDF) - ON Semiconductor

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производитель

NCV8772BD5S
(Rev.:2011)

Ultra Low I q 350 mA LDO Regulator with Enable and Reset

ON Semiconductor 

Vin

(1 V/div)

14.2 V

13 V

NCV8772

TYPICAL CHARACTERISTICS

TJ = 25°C

Iout = 1 mA

Cout = 10 mF

trise/fall = 1 ms (Vin)

12.2 V

Vin

(1 V/div)

14.2 V

13 V

TJ = 25°C

Iout = 1 mA

Cout = 10 mF

trise/fall = 1 ms (Vin)

12.2 V

Vout

(50 mV/div)

Iout

(200 mA/div)

Vout

(200 mV/div)

5.11 V

5V

4.98 V

TIME (1 ms/div)

Figure 18. Line Transients

(5 V Option)

3.42 V

Vout

(50 mV/div)

3.33 V

3.3 V

TIME (1 ms/div)

Figure 19. Line Transients

(3.3 V Option)

350 mA

5V

4.54 V

TJ = 25°C

Vin = 13.2 V

Cout = 10 mF

trise/fall = 1 ms (Iout)

0.1 mA

Iout

(200 mA/div)

5.3 V

350 mA

3.3 V

Vout

(200 mV/div)

2.92 V

TJ = 25°C

Vin = 13.2 V

Cout = 10 mF

trise/fall = 1 ms (Iout)

0.1 mA

3.58 V

Vin

(5 V/div)

Vout

(5 V/div)

VRO

(5 V/div)

TIME (20 ms/div)

Figure 20. Load Transients

(5 V Option)

TJ = 25°C

VEN = Vin

Rout = 5 kW

TIME (100 ms/div)

Figure 22. Power Up/Down Response

(5 V Option)

Vin

(5 V/div)

Vout

(5 V/div)

VRO

(5 V/div)

TIME (20 ms/div)

Figure 21. Load Transients

(3.3 V Option)

TJ = 25°C

VEN = Vin

Rout = 3.3 kW

TIME (100 ms/div)

Figure 23. Power Up/Down Response

(3.3 V Option)

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