NCV8876 Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

NCV8876

Automotive Grade Start-Stop Non-Synchronous Boost Controller

ON Semiconductor 

ROSC

8

ROSC

VC

7

RC

CC

NCV8876

TEMP

OSC

SC

Battery In

Vg

FAULT

LOGIC

CLK

DRIVE

LOGIC

VDRV

CL

CSA

+

SCP

VDRV CDRV

5

NVMFS5844NL

GDRV

4

Cg

L

NRVB440FS

Vo

Q

Co

ISNS RGDRV

2

GND

3

RSNS

Cdecoupling

Vmicro

Gm

VOUT

WAKEUP 6

VREF

STATUS

1

Figure 1. Typical Application

STATUS

Sleep Threshold

Wakeup Threshold

Regulation

7.7 V

7.3 V

6.8 V

VOUT

(Internal signal)

Wakeup

COMP

Internal Clamp

Voltage

GDRV

Wakeup Delay

Comp Delay

Figure 2. Functional Waveforms

PACKAGE PIN DESCRIPTIONS

Pin No.

Pin

Symbol

Function

1

STATUS This is an open−drain diagnostic. IC status operation flag indicator. This output is a logic low when IC VOUT is

below 7.3 V and device is active. A pull−up resistor of around 80 kW should be connected between STATUS

and a microcontroller reference. This output is a logic high when the IC is disabled or in UVLO.

2

ISNS

Current sense input. Connect this pin to the source of the external N−MOSFET, through a current−sense res-

istor to ground to sense the switching current for regulation and current limiting.

3

GND

Ground reference.

4

GDRV Gate driver output. Connect to gate of the external N−MOSFET. A series resistance can be added from GDRV

to the gate to tailor EMC performance. An RGND = 15 kW GDRV−GND resistor is strongly recommended.

5

VDRV

Driving voltage. Internally−regulated supply for driving the external N−MOSFET, sourced from VOUT. Bypass

with a 1.0 mF ceramic capacitor to ground.

6

VOUT

Monitors output voltage and provides IC input voltage.

7

VC

Output of the voltage error transconductance amplifier. An external compensator network from VC to GND is

used to stabilize the converter.

8

ROSC Use a resistor to ground to set the frequency.

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2

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