NCV8570BSN28T1G(2011) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

NCV8570BSN28T1G
(Rev.:2011)

200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator

ON Semiconductor 

NCV8570B

TYPICAL CHARACTERISTICS

1.90

1.85

1.80

1.75

1.70

1.65

1.60

0

200 mA

300

200

100

1 mA

0

COUT = 1 mF, VIN = 2.5 V, Cnoise = 100 nF,

dIOUT/dt = 200 mA / 1 ms

40 80 120 160 200 240 280 320 360 400

t, TIME (ms)

Figure 27. Load Transient Response, VOUT =

1.8 V, COUT = 1 mF, Cnoise = 100 nF

3.40

3.35

3.30

3.25

3.20

3.15

3.10

0

200 mA

300

200

100

1 mA

0

COUT = 4.7 mF, VIN = 3.8 V, Cnoise = 100 nF,

dIOUT/dt = 200 mA / 1 ms

40 80 120 160 200 240 280 320 360 400

t, TIME (ms)

Figure 28. Load Transient Response, VOUT =

3.3 V, COUT = 4.7 mF, Cnoise = 100 nF

300

200 mA

200

1 mA

100

0

3.40

3.35

3.30

3.25

3.20

3.15

3.10

0

COUT = 1 mF, VIN = 3.8 V, Cnoise = 100 nF,

dIOUT/dt = 200 mA / 1 ms

40 80 120 160 200 240 280 320 360 400

t, TIME (ms)

Figure 29. Load Transient Response, VOUT =

3.3 V, COUT = 1 mF, Cnoise = 100 nF

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