NCV8570B(2011) Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
NCV8570B
(Rev.:2011)
(Rev.:2011)
ON Semiconductor
NCV8570B Datasheet PDF : 21 Pages
| |||
NCV8570B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage (Note 2)
IN
−0.3 V to 6 V
V
Chip Enable Voltage
Noise Reduction Voltage
Output Voltage
Output Short−Circuit Duration
EN
−0.3 V to VIN +0.3 V
BYP
−0.3 V to VIN +0.3 V
V
OUT
−0.3 V to VIN +0.3 V
V
Infinity
Maximum Junction Temperature
TJ(max)
125
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V tested per MIL−STD−883, Method 3015
Machine Model Method 200 V
This device meets or exceeds AEC−Q100 standard.
THERMAL CHARACTERISTICS
Rating
Package Thermal Resistance, DFN6: (Notes 2, 3)
Junction−to−Case (Pin 2)
Junction−to−Ambient
Package Thermal Resistance, TSOP−5: (Notes 2, 3)
Junction−to−Case (Pin 2)
Junction−to−Ambient
2. Refer to APPLICATION INFORMATION for Safe Operating Area
3. Single component mounted on 1 oz, FR4 PCB with 645mm2 Cu area.
Symbol
YJL2
RqJA
YJL2
RqJA
Value
108
153
92
204
Unit
°C/W
°C/W
http://onsemi.com
3
Share Link: