NCV8570SN33T1G Просмотр технического описания (PDF) - ON Semiconductor
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NCV8570SN33T1G Datasheet PDF : 12 Pages
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NCV8570
Vin
Cnoise
Bandgap
Reference
Voltage
CE
Vout
Current
Limit
Active
Discharge
GND
Figure 2. Simplified Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
DFN6
TSOP−5 Pin Name
1
3
CE
2, 5, EPAD
2
3
1
4
5
6
4
GND
Vin
Vout
Cnoise
Description
Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect
to GND. If this function is not in use, connect to Vin. Internal 5 MW Pull Down resistor is
connected between CE and GND.
Power Supply Ground (Pins are fused for the DFN package)
Power Supply Input Voltage
Regulated Output Voltage
Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage (Note 1)
Vin
−0.3 V to 6 V
V
Chip Enable Voltage
VCE
−0.3 V to Vin +0.3 V
V
Noise Reduction Voltage
VCnoise
−0.3 V to Vin +0.3 V
V
Output Voltage
Vout
−0.3 V to Vin +0.3 V
V
Maximum Junction Temperature (Note 1)
TJ(max)
150
C
Storage Temperature Range
TSTG
−55 to 150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015
Machine Model Method 200 V
This device series meets or exceeds AEC Q100 standard.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Package Thermal Resistance, DFN6: (Note 1)
Junction−to−Lead (pin 2)
Junction−to−Ambient
RqJA
37
120
Package Thermal Resistance, TSOP−5: (Note 1)
Junction−to−Lead (pin 5)
Junction−to−Ambient
RqJA
109
220
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area
Unit
C/W
C/W
http://onsemi.com
2
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