NCV7001DWR2(2003) Просмотр технического описания (PDF) - ON Semiconductor
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NCV7001DWR2 Datasheet PDF : 8 Pages
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22 k
Variable
Reluctance
Sensor
1/4 W
0.001 µF
200 V
22 k
1/4 W
22 k
Variable
Reluctance
Sensor
1/4 W
0.001 µF
200 V
22 k
1/4 W
22 k
Variable
Reluctance
Sensor
1/4 W
0.001 µF
200 V
22 k
1/4 W
22 k
Variable
Reluctance
Sensor
1/4 W
0.001 µF
200 V
22 k
1/4 W
0.01 µF
50 V
0.01 µF
50 V
0.01 µF
50 V
0.01 µF
50 V
0.01 µF
50 V
0.01 µF
50 V
0.01 µF
50 V
0.01 µF
50 V
NCV7001
0.047 µF
47 k
47 k
RDLY
NOUT1
NTEST NOUT2
INN1
WDO
INP1
LVI
INN2
NLVI
INP2
WD2
INP3
INN3
VCC
WD1
INP4
OLE
INN4
WDLY
THOLD NOUT3
GND
NOUT4
NCV7001
0.1 µF VCC
0.1 µF
47 k
Figure 1. Application Diagram
MAXIMUM RATINGS*
Rating
DC Supply Voltage (VCC)
Input Clamp Current
ESD Capability (Human Body Model)
Storage Temperature
Operating Junction Temperature
Package Thermal Resistance:
Junction−to−Case, RθJC
Junction−to−Ambient, RθJA
Lead Temperature Soldering:
*The maximum package power dissipation must be observed.
1. 60 second maximum above 183°C.
2. −5°C/+0°C allowable conditions.
Reflow: (SMD styles only) (Notes 1, 2)
http://onsemi.com
2
Value
−0.3 to 7.0
−10, 10
2.0
−55 to 150
−40 to 150
16
80
240 peak
Unit
V
mA
kV
°C
°C
°C/W
°C/W
°C
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