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NCV4290 Просмотр технического описания (PDF) - ON Semiconductor

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NCV4290 Datasheet PDF : 16 Pages
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NCV4290
PIN FUNCTION DESCRIPTION
Pin #
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ 1
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ 2
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ 3, Tab
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ 4
ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ 5
Symbol
Description
I
Input; Battery Supply Input Voltage. Bypass to ground with a ceramic capacitor.
PG
GND
Power Good Output; Open Collector Active Power Good (accurate when VQ > 1.0 V).
Ground; Pin 3 internally connected to tab.
D
Power Good Delay; timing capacitor to GND for Power Good Delay function.
Q
Output; ±2.0%, 450 mA output. Bypass with 22 mF capacitor, ESR < 4.0 W.
MAXIMUM RATINGS
Rating
Symbol
Min
Max
Unit
Input Voltage
VI
42
45
V
Input Peak Transient Voltage
VI
45
V
Output Voltage
VQ
1.0
16
V
Power Good Output Voltage
VPG
0.3
25
V
Power Good Output Current
IPG
5.0
5.0
mA
Power Good Delay Voltage
VD
0.3
7.0
V
Power Good Delay Current
ID
2.0
2.0
mA
ESD Susceptibility (Note 1) Human Body Model
Machine Model
Charge Device Model
ESDHBM
ESDMM
ESDCDM
4.0
200
1000
kV
V
V
Junction Temperature
TJ
40
150
°C
Storage Temperature
Tstg
55
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AECQ100002, ESD
Machine Model tested per AECQ100003, ESD Charged Device Model tested per AECQ100011, Latchup tested per AECQ100004.
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