NCV4290(2012) Просмотр технического описания (PDF) - ON Semiconductor
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NCV4290 Datasheet PDF : 15 Pages
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NCV4290
ELECTRICAL CHARACTERISTICS (VI = 13.5 V, CQ = 22 mF, ESR = 1.5 W; −40°C < TJ < 150°C; unless otherwise noted.)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
OUTPUT
Output Voltage (5.0 V Option)
Output Voltage (5.0 V Option)
VQ
100 mA v IQ v 400 mA
6.0 V v VI v 28 V
VQ
100 mA v IQ v 200 mA
6.0 V v VI v 40 V
4.9
5.0
5.1
4.9
5.0
5.1
Output Current Limitation
IQ
Quiescent Current
Iq
Iq = II − IQ
Dropout Voltage (5.0 V Option)
Vdr
Load Regulation
Line Regulation
DVQ
DVQ
Power Supply Ripple Rejection
PSRR
Temperature Output Voltage Drift
dVQ/dT
DELAY TIMING D AND POWER GOOD OUTPUT
VQ = 0.9 x VQ,typ
IQ = 1.0 mA
IQ = 1.0 mA, TJ = 25°C
IQ = 250 mA
IQ = 400 mA
IQ = 300 mA
Vdr = VI − VQ (Note 7)
IQ = 5.0 mA to 400 mA
DVI = 8.0 V to 32 V,
IQ = 5.0 mA
fr = 100 Hz, Vr = 0.5 Vpp
−−
450 1000
−
−
170
230
−
170
200
−
10
15
−
23
35
−
250
500
−30
5.0
30
−15
5.0
15
−
60
−
−
0.5
−
PG Switching Threshold (5.0 V Option)
PG Switching Threshold (5.0 V Option)
PG Output Low Voltage
PG Output Leakage Current
PG Charging Current
Upper Timing Threshold
Lower Timing Threshold
PG Delay Time
PG Reaction Time
THERMAL SHUTDOWN
VQ,pgt−i
VQ,pgt−d
VPG
IPG
ID,C
VDU
VDL
trd
trr
VQ increasing
VQ decreasing
Rext ≥ 5.0 kW, VQ ≥ 1.0 V
VPGH > 4.5 V
VD = 1.0 V
−−
−−
CD = 47 nF
CD = 47 nF
4.45
4.65
4.8
3.5
3.65
3.8
−
0.1
0.4
−
0
10
3.0
6.0
9.0
1.5
1.8
2.2
0.6
0.85
1.1
10
16
22
0.2
0.75
2.0
Shutdown Temperature (Note 8)
TSD
−−
150
−
210
7. Measured when output voltage VQ falls 100 mV below the regulated voltage at VI = 13.5 V. Vdr = VI − VQ.
8. Guaranteed by design, not tested in production.
Unit
V
V
mA
mA
mA
mA
mA
mV
mV
mV
dB
mV/K
V
V
V
mA
mA
V
V
ms
ms
°C
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