NCV4276B(2010) Просмотр технического описания (PDF) - ON Semiconductor
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NCV4276B Datasheet PDF : 12 Pages
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NCV4276B
ELECTRICAL CHARACTERISTICS (VI = 13.5 V; −40°C < TJ < 150°C; unless otherwise noted.)
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
OUTPUT
Output Voltage
AVQ 5.0 mA < IQ < 400 mA
VQ+1 < VI < 40 V
VI > 4.5 V
−2%
−
+2%
V
Output Current Limitation
IQ
VQ = 90% VQTYP (VQTYP = 2.5 V)
400 700 1100 mA
Quiescent Current (Sleep Mode)
Iq = II − IQ
Iq
VINH = 0 V
−
−
10
mA
Quiescent Current, Iq = II − IQ
Iq
IQ = 1.0 mA
−
130 200 mA
Quiescent Current, Iq = II − IQ
Iq
IQ = 250 mA
−
10
15
mA
Quiescent Current, Iq = II − IQ
Iq
IQ = 400 mA
−
25
35
mA
Dropout Voltage
VDR IQ = 250 mA, VDR = VI − VQ, VI > 4.5 V
−
250 500 mV
Load Regulation
DVQ,LO IQ = 5.0 mA to 400 mA
−
3.0
20
mV
Line Regulation
DVQ
DVI = 12 V to 32 V,
IQ = 5.0 mA
−
4.0
15
mV
Power Supply Ripple Rejection
PSRR fr = 100 Hz, Vr = 0.5 VPP
−
70
−
dB
Temperature Output Voltage Drift dVQ/dT
−
−
0.5
− mV/K
INHIBIT
Inhibit Voltage, Output High
VINH VQ w VQMIN
−
2.3
2.8
V
Inhibit Voltage, Output Low (Off)
VINH VQ v 0.1 V
1.8
2.2
−
V
Input Current
IINH
VINH = 5.0 V
5.0
10
20
mA
THERMAL SHUTDOWN
Thermal Shutdown Temperature* TSD IQ = 5.0 mA
*Guaranteed by design, not tested in production.
150
−
210
°C
Input
II
CI1
1.0 mF
IINH
VQ = [(R1 + R2) * Vref] / R2
I1
5Q
IQ
Output
CI2
100 nF
NCV4276B
CQ
22 mF
Cb*
R1
INH 2
3
4 VA
RL
GND
R2
Cb* − Required if usage of low ESR output capacitor CQ is demand, see Regulator Stability Considerations section
Figure 2. Applications Circuit
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