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NCV4275DS Просмотр технического описания (PDF) - ON Semiconductor

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NCV4275DS
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCV4275DS Datasheet PDF : 14 Pages
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NCV4275
ELECTRICAL CHARACTERISTICS (VI = 13.5 V; 40°C < TJ < 150°C; unless otherwise noted. Refer to Figure 13 for conditions.)
Characteristic
Symbol
Test Conditions
Min
Typ
Max Unit
Output
Output Voltage
Output Voltage
Output Current Limitation
Quiescent Current, Iq = II IQ
Quiescent Current, Iq = II IQ
Quiescent Current, Iq = II IQ
Quiescent Current, Iq = II IQ
Dropout Voltage
Load Regulation
Line Regulation
Power Supply Ripple Rejection
Temperature Output Voltage Drift
Reset Timing D and Output RO
VQ
VQ
IQ
Iq
Iq
Iq
Iq
Vdr
ΔVQ
ΔVQ
PSRR
dVQ/dt
100 mA < IQ < 400 mA, 6.0 V < VI < 28 V
100 mA < IQ < 200 mA, 6.0 V < VI < 40 V
VQ = 4.5 V
IQ = 1.0 mA
IQ = 1.0 mA, TA = 25°C
IQ = 250 mA
IQ = 400 mA
IQ = 300 mA, Vdr = VI VQ, VI = 5.0 V
IQ = 5.0 mA to 400 mA
ΔVI = 8.0 V to 32 V, IQ = 5.0 mA
fr = 100 Hz, Vr = 0.5 Vpp
4.9
5.0
5.1
V
4.9
5.0
5.1
V
450
700
mA
150
200
mA
135
150
mA
10
15
mA
23
35
mA
250
500
mV
30
15
30
mV
15
5.0
15
mV
60
dB
0.5
mV/k
Reset Switching Threshold
Reset Output Low Voltage
Reset Output Leakage Current
Reset Charging Current
Upper Timing Threshold
Lower Timing Threshold
Reset Delay Time
Reset Reaction Time
Thermal Shutdown
VQ,rt
VROL
VROH
ID,C
VDU
VDL
trd
trr
Rext > 5.0 k, VQ > 1.0 V
VROH = 5.0 V
VD = 1.0 V
CD = 47 nF
CD = 47 nF
4.53 4.65
4.8
V
0.2
0.4
V
0
10
mA
3.0
5.5
9.0
mA
1.5
1.8
2.2
V
0.2
0.4
0.7
V
10
16
22
ms
1.5
4.0
ms
Shutdown Temperature (Note 6)
TSD
6. Guaranteed by design, not tested in production.
150
210
°C
1000
100
TYPICAL PERFORMANCE CHARACTERISTICS
10
Unstable ESR Region for
CQ = 1 mF
Maximum ESR for
CQ = 1 mF
Unstable Region
10
5.0
1
Stable ESR Region
Minimum ESR for
CQ = 1 mF
0.1
Unstable Region for CQ = 1 mF
0.01
0
0
100
200
300
400
500
0
OUTPUT CURRENT (mA)
Figure 2. Output Stability with Output
Capacitor ESR
Stable Region
CVout = 22 mF
100
200
300
400
500
OUTPUT CURRENT (mA)
Figure 3. Output Capacitor ESR
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