HI5721-EVP(1999) Просмотр технического описания (PDF) - Intersil

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производитель

HI5721-EVP
(Rev.:1999)

10-Bit, 125 MSPS, High Speed D/A Converter

Intersil 

HI5721

Electrical Specifications ATAVE=E2,5DoVCEfEor=A-l4l .T9y4pitcoa-l5V.a4l6uVe,sVC(CCo=n+ti4n.u7e5dto) +5.25V, CTRL AMP IN = REF OUT,

PARAMETER

TEST CONDITIONS

HI5721BI

TA = -40oC TO 85oC

MIN TYP MAX

UNITS

REFERENCE/CONTROL AMPLIFIER

Internal Reference Voltage, REF OUT

Internal Reference Voltage Drift

(Note 4)

(Note 3)

-1.15

-

-1.25

100

-1.35

-

V

µV/oC

Internal Reference Output Current Sink/Source

Capability

(Note 3)

-50

-

+500

µA

Amplifier Input Impedance

(Note 3)

-

10

-

MΩ

Amplifier Large Signal Bandwidth

4.0VP-P Sine Wave Input, to Slew Rate Limited

-

1

-

MHz

(Note 3)

Amplifier Small Signal Bandwidth

Reference Input Impedance

1.0VP-P Sine Wave Input, to -3dB Loss (Note 3)

-

10

-

MHz

(Note 3)

-

4.6

-

kΩ

Reference Input Multiplying Bandwidth

DIGITAL INPUTS (D9-D0, CLK, INVERT)

RL = 50Ω, 100mV Sine Wave, to -3dB Loss at

-

75

-

MHz

IOUT (Note 3)

Input Logic High Voltage, VIH

Input Logic Low Voltage, VIL

Input Logic Current, IIH

Input Logic Current, IIL

Digital Input Capacitance, CIN

TIMING CHARACTERISTICS

(Note 4)

(Note 4)

(Note 4)

(Note 4)

(Note 3)

2.0

-

-

V

-

-

0.8

V

-

-

400

µA

-

-

700

µA

-

3.0

-

pF

Data Setup Time, tSU

Data Hold Time, tHLD

Propagation Delay Time, tPD

CLK Pulse Width, tPW1, tPW2

POWER SUPPLY CHARACTERISITICS

See Figure 3 (Note 3)

See Figure 3 (Note 3)

See Figure 3 (Note 3)

See Figure 3 (Note 3)

2.0

-

-

ns

0.5

-

-

ns

-

4.5

-

ns

1.0 0.85

-

ns

IDVEE

IAVEE

VCC

Power Dissipation

(Note 4)

(Note 4)

(Note 4)

(Note 4)

-

100 110

mA

-

-

15

mA

-

14

25

mA

-

700 775

mW

Power Supply Rejection Ratio

VCC ±5%, VEE ±5%

-

50

-

µA/V

NOTES:

2. Gain Error measured as the error in the ratio between the full scale output current and the current through RSET (typically 640µA). Ideally the

ratio should be 32.

3. Parameter guaranteed by design or characterization and not production tested.

4. All devices are 100% tested at 25oC. 100% productions tested at temperature extremes for military temperature devices, sample tested for in-

dustrial temperature devices.

5. Spectral measurements made without external filtering.

3-38

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