NB3N511DR2G Просмотр технического описания (PDF) - ON Semiconductor
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NB3N511DR2G Datasheet PDF : 6 Pages
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NB3N511
Table 6. DC CHARACTERISTICS VDD = 3.3 V ±10% or 5.0 V ± 5% unless otherwise noted, GND = 0 V, TA = −40°C to +85°C
Symbol
Characteristic
Min
Typ
Max
Unit
VDD
Operating Voltage
VDD = 5 V
VDD = 3.3 V
4.75
3.0
5.25
V
3.6
IDD
Power Supply Current – Inputs and outputs open, CLKOUT operating
mA
at 100 MHz (with 20 MHz crystal)
VDD = 5 V
9
VDD = 3.3 V
8
VOH
Output HIGH Voltage IOH = −4 mA CMOS High
VOH
Output HIGH Voltage IOH = −25 mA TTL High
VOL
Output LOW Voltage IOL = 25 mA
VIH
Input HIGH Voltage, ICLK only (pin 1)
VDD − 0.4
2.4
VDD = 5 V (VDD / 2) + 1
VDD = 3.3 V (VDD / 2) + 0.7
V
V
0.4
V
V
VIL
Input LOW Voltage, ICLK only (pin 1)
VDD = 5 V
VDD = 3.3 V
(VDD / 2) − 1
V
(VDD / 2) − 0.7
VIH
Input HIGH Voltage, S0, S1
VIL
Input LOW Voltage, S0, S1
VIH
Input HIGH Voltage, OE (pin 7)
VIL
Input LOW Voltage, OE (pin 7)
VDD − 0.5
2.0
V
0.5
V
V
0.8
V
Cin
Input Capacitance, S0, S1 and OE
ISC
Output Short Circuit Current, CLKOUT
Nominal Output Impedance
4
pF
±70
mA
20
W
Table 7. AC CHARACTERISTICS VDD = 3.3 V ±10% or 5.0 V ± 5% unless otherwise noted, GND = 0 V, TA = −40°C to +85°C
Symbol
Characteristic
Min
Typ
Max
Unit
fXtal
Crystal Input Frequency (Note 3)
5
32
MHz
fCLKIN
Clock Input Frequency
1
fOUT
Output Frequency Range fOUTMIN ≤ fIN x Multiplier ≤ fOUTMAX
VDD = 4.25 to 5.25 V (5.0 V ± 5%)
14
VDD = 3.0 to 3.6 V (3.3 V ± 10%)
14
50
MHz
MHz
200
200
DC
Output Clock Duty Cycle at 1.5 V
45
50
55
%
OEH
Output enable time, OE high to output on
50
ns
OEL
Output disable time, OE low to tri−state
50
ns
tjitter (rms)
Period Jitter (rms, 1 s)
25
ps
tjitter (pk−to−pk) Total Period Jitter, (peak−to−peak)
±70
ps
tr/tf
Output rise/fall time (0.8 V to 2.0 V) (measured with 15 pF load)
1
1.5
ns
3. The crystal should be fundamental mode, parallel resonant. Do not use third overtone. For exact tuning when using a crystal, capacitors
should be connected from pins X1/CLK to GND and X2 to GND. The value of these capacitors is given by the following equation, where
CL is the specified crystal load capacitance: Crystal capacitance (pF) = (CL − 12) X 2. So, for a crystal with 16 pF load capacitance, use
two 8 pF capacitors.
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