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MX29F4000PC-70 Просмотр технического описания (PDF) - Macronix International

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MX29F4000PC-70
MCNIX
Macronix International MCNIX
MX29F4000PC-70 Datasheet PDF : 36 Pages
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MX29F4000
AUTOMATIC PROGRAMMING
The MX29F4000 is byte programmable using the
Automatic Programming algorithm. The Automatic
Programming algorithm makes the external system do
not need to have time out sequence nor to verify the data
programmed. The typical chip programming time at
room temperature of the MX29F4000 is less than 4
seconds.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 4 second. The Automatic Erase algorithm
automatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29F4000 is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes
allow sectors of the array to be erased in one erase
cycle. The Automatic Sector Erase algorithm
automatically programs the specified sector(s) prior to
electrical erase. The timing and verification of
electrical erase are controlled internally within the
device.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program
verification, and counts the number of sequences. A
status bit similar to DATA polling and a status bit toggling
between consecutive read cycles, provide feedback to
the user as to the status of the programming operation.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using standard
microprocessor write timings. The device will
automatically pre-program and verify the entire array.
Then the device automatically times the erase pulse
width, provides the erase verification, and counts the
number of sequences. A status bit toggling between
consecutive read cycles provides feedback to the user
as to the status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming
circuitry. During write cycles, the command register
internally latches address and data needed for the
programming and erase operations. During a system
write cycle, addresses are latched on the falling edge of
WE or CE, whichever happeds later, and data are latched
on the rising edge of WE or CE, whichever happeds first.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality,
reliability, and cost effectiveness. The MX29F4000
electrically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by
using the EPROM programming mechanism of hot
electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register
to respond to its full command set.
P/N:PM0629
REV. 1.0, DEC. 20, 1999
4

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