BLV33 Просмотр технического описания (PDF) - Philips Electronics
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BLV33 Datasheet PDF : 20 Pages
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Philips Semiconductors
VHF linear power transistor
Product specification
BLV33
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
V(BR)CES
V(BR)CEO
V(BR)EBO
ICES
hFE
VCEsat
fT
Cc
Cre
Ccs
PARAMETER
CONDITIONS
MIN.
collector-emitter breakdown voltage VBE = 0; IC = 25 mA
65
collector-emitter breakdown voltage open base; IC = 100 mA
33
emitter-base breakdown voltage open collector; IE = 10 mA
4
collector cut-off current
VBE = 0; VCE = 30 V
−
DC current gain
VCE = 25 V; IC = 3 A; note 1
15
collector-emitter saturation voltage IC = 6 A; IB = 0.6 A; note 1
−
transition frequency
VCB = 25 V; IE = −3 A;
−
f = 100 MHz; note 2
transition frequency
VCB = 25 V; IE = −6 A;
−
f = 100 MHz; note 2
collector capacitance
feedback capacitance
VCB = 25 V; IE = ie = 0; f = 1 MHz −
IC = 100 mA; VCE = 25 V;
−
f = 1 MHz
collector-stud capacitance
−
TYP.
−
−
−
−
50
0.75
680
750
155
88
3
MAX. UNIT
−
V
−
V
−
V
1
mA
100
−
V
−
MHz
−
MHz
−
pF
−
pF
−
pF
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0.01.
1996 Oct 10
5
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