Philips Semiconductors
VHF linear power transistor
Product specification
BLV33
FEATURES
• Diffused emitter ballasting resistors for an optimum
temperature profile
• Gold sandwich metallization ensures excellent
reliability.
APPLICATIONS
• Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
1⁄16" 4 fslead SOT147 capstan package with ceramic cap.
All leads are isolated from the stud.
PINNING - SOT147
PIN
SYMBOL
DESCRIPTION
1
c
collector
2
e
emitter
3
b
base
4
e
emitter
handbook, halfpage 2
1
3
4
Top view
c
b
e
MAM270
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a common emitter push-pull test circuit.
MODE OF
OPERATION
fvision
(MHz)
CW, class-A
CW, class-AB
224.25
224.25
VCE
IC, IC(ZS)
Th
(V)
(A)
(°C)
70
25
3.2
25
28
0.1
70
dim(1)
(dB)
−55
−55
Po sync(1)
(W)
>16.5
typ. 26
typ. 90
GP
(dB)
>9
typ. 9.7
typ. 6.5
sync compr.(2)
sync in/sync out
(%)
30/25
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
2. Television service (negative modulation, C.C.I.R. system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10
2