MW7IC2725NR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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MW7IC2725NR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, 2500- 2700 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

25

—

W

IMD Symmetry @ 27 W PEP, Pout where IMD Third Order

Intermodulation ` 30 dBc

IMDsym

MHz

—

50

—

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

90

—

MHz

Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg.

Average Deviation from Linear Phase in 200 MHz Bandwidth

@ Pout = 25 W CW

Average Group Delay @ Pout = 25 W CW, f = 2600 MHz

Part-to-Part Insertion Phase Variation @ Pout = 25 W CW,

f = 2600 MHz, Six Sigma Window

GF

—

0.5

—

dB

Φ

—

2.1

—

°

Delay

—

2.3

—

ns

ΔΦ

—

22

—

°

Gain Variation over Temperature

(-30 °C to +85°C)

ΔG

—

0.036

—

dB/°C

Output Power Variation over Temperature

(-30 °C to +85°C)

ΔP1dB

—

0.003

—

dBm/°C

Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg.,

f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability

on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.

Power Gain

Gps

—

27.8

—

dB

Power Added Efficiency

PAE

—

3.2

—

%

Output Peak-to-Average Ratio @ 0.01% Probability on CCDF

PAR

—

9

—

dB

Adjacent Channel Power Ratio

ACPR

—

-56

—

dBc

Input Return Loss

Relative Constellation Error @ Pout = 1.25 W Avg. (1)

ăĂ1. RCE = 20Log(EVM/100)

IRL

—

-13

—

dB

RCE

—

-40

—

dB

MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1

4

RF Device Data

Freescale Semiconductor

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