Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
-0.5, +65
-0.5, +10
32, +0
-ā65 to +150
150
225
22
Value (2,3)
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
WiMAX Application
Stage 1, 28 Vdc, IDQ1 = 77 mA
5.9
(Case Temperature 75°C, Pout = 4 W Avg.)
Stage 2, 28 Vdc, IDQ2 = 275 mA
1.4
CW Application
Stage 1, 28 Vdc, IDQ1 = 77 mA
5.5
(Case Temperature 81°C, Pout = 25 W CW)
Stage 2, 28 Vdc, IDQ2 = 275 mA
1.3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate-Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10
μAdc
IDSS
—
—
1
μAdc
IGSS
—
—
1
μAdc
Stage 1 - On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 77 mA)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)
VGG(Q)
12.5
15.8
19.5
Vdc
ăĂ1. Continuous use at maximum temperature will affect MTTF.
Ăă2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
2
RF Device Data
Freescale Semiconductor