MW7IC2725NR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MW7IC2725NR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Zo = 50 Ω

f = 2700 MHz

Zload

f = 2500 MHz

f = 2700 MHz

Zsource f = 2500 MHz

VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg.

f

MHz

Zsource

W

Zload

W

2500

36.381 - j4.271 5.717 - j3.618

2525

36.041 - j3.328 5.624 - j3.187

2550

35.753 - j2.363 5.578 - j2.770

2575

35.516 - j1.380 5.589 - j2.412

2600

35.333 - j0.381 5.586 - j2.088

2625

35.203 + j0.635 5.579 - j1.807

2650

35.126 + j1.664 5.552 - j1.559

2675

35.104 + j2.707 5.564 - j1.335

2700

35.138 + j3.760 5.568 - j1.164

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 16. Series Equivalent Source and Load Impedance

MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1

10

RF Device Data

Freescale Semiconductor

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