MW7IC2725NR1(2008) Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание

производитель

MW7IC2725NR1
(Rev.:2008)

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

28.6

18

28.4

ηD

17

28.2 Gps

16

28

15

27.8

VDD = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA

OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel

14

27.6 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability

−53

−16

−0.2

27.4 on CCDF

−54

−18

−0.4

27.2 ACPR

−55

−20

−0.6

27 PARC

−56

−22

−0.8

26.8

−57

−24

−1

26.6

IRL

−58

−26

−1.2

2500 2525 2550 2575 2600 2625 2650 2675 2700

f, FREQUENCY (MHz)

Figure 5. WiMAX Broadband Performance @ Pout = 4 Watts Avg.

28.6

28.4

28.2 Gps

3.5

ηD

3

2.5

28

2

27.8

VDD = 28 Vdc, Pout = 26 dBm (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA

OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth

1.5

27.6 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF

−56

−10

−0.2

27.4

PARC

−57

−15

−0.4

27.2 ACPR

27

−58

−20

−0.6

−59

−25

−0.8

26.8

26.6

IRL

−60

−30

−1

−61

−35

−1.2

2500 2525 2550 2575 2600 2625 2650 2675 2700

f, FREQUENCY (MHz)

Figure 6. WiMAX Broadband Performance @ Pout = 26 dBm Avg.

30

29 344 mA

28 275 mA

IDQ2 = 412 mA

27

206 mA

26

25 137 mA

24

VDD = 28 Vdc

IDQ1 = 77 mA

f = 2600 MHz

23

0.1

1

10

100

Pout, OUTPUT POWER (WATTS) CW

Figure 7. Power Gain versus Output Power

@ IDQ1 = 77 mA

30

IDQ1 = 103 mA

29

96 mA

28

77 mA

27

58 mA

26

25

39 mA

24

VDD = 28 Vdc

IDQ2 = 275 mA

f = 2600 MHz

23

0.1

1

10

100

Pout, OUTPUT POWER (WATTS) CW

Figure 8. Power Gain versus Output Power

@ IDQ2 = 275 mA

RF Device Data

Freescale Semiconductor

MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1

7

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