MURHB840CTG(2013) Просмотр технического описания (PDF) - ON Semiconductor
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MURHB840CTG Datasheet PDF : 5 Pages
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MURHB840CTG, MURHB840CTT4G, SURHB8840CTT4G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
400
V
VRWM
VR
Average Rectified Forward Current
(Rated VR, TC = 120°C) Total Device
IF(AV)
4.0
A
8.0
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 120°C)
IFM
A
8.0
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
A
100
Controlled Avalanche Energy
WAVAL
20
mJ
Operating Junction and Storage Temperature Range
TJ, Tstg
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Value
3.0
50
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 4.0 A, TC = 150°C)
(iF = 4.0 A, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 150°C)
(Rated DC Voltage, TC = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
Typical Peak Reverse Recovery Current
(IF = 1.0 A, di/dt = 50 A/ms)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
Symbol
vF
iR
trr
IRM
Value
1.9
2.2
500
10
28
0.7
Unit
V
mA
ns
A
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