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MUR3060PT Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MUR3060PT
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MUR3060PT Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MUR3020PT, MUR3040PT, MUR3060PT
MAXIMUM RATINGS (Per Leg)
Rating
Symbol MUR3020PT MUR3040PT MUR3060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
200
400
VRWM
VR
600
V
Average Rectified Forward Current (Rated VR)
Per Leg
Per Device
IF(AV)
15 @ TC = 150°C
30 @ TC = 150°C
A
15 @ TC = 145°C
30 @ TC = 145°C
Peak Rectified Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz)
IFRM
30 @ TC = 150°C
30 @ TC =145°C
A
Nonrepetitive Peak Surge Current (Surge applied at rated
load conditions, halfwave, single phase, 60 Hz) Per Leg
IFSM
200
A
Operating Junction and Storage Temperature
TJ, Tstg
65 to +175
°C
THERMAL CHARACTERISTICS (Per Diode Leg)
Maximum Thermal Resistance,
JunctiontoCase
JunctiontoAmbient
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
RqJC
RqJA
°C/W
1.5
40
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 15 Amp, TC = 150°C)
(IF = 15 Amp, TC = 25°C)
VF
0.85
1.12
1.05
1.25
V
1.2
1.5
Maximum Instantaneous Reverse Current (Note 1)
iR
(Rated DC Voltage, TJ = 150°C)
500
(Rated DC Voltage, TJ = 25°C)
10
mA
1000
10
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
trr
35
60
ns
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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