NT5SV16M4DT Просмотр технического описания (PDF) - Nanya Technology

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NT5SV16M4DT

64Mb Synchronous DRAM

Nanya Technology 

NT5SV16M4DT

NT5SV8M8DT

NT5SV4M16DT

64Mb Synchronous DRAM

Current State Truth Table (Part 2 of 3)(See note 1)

Command

Current State

CS RAS CAS WE BS0,BS1 A11 - A0

Description

Action

Notes

LLLL

OP Code

Mode Register Set ILLEGAL

L L LH

X

X

Auto or Self Refresh ILLEGAL

LLHL

BS

X

Precharge

ILLEGAL

4

Read with

L LHH

BS Row Address Bank Activate

ILLEGAL

4

Auto Pre-

LHL L

BS

Column Write

ILLEGAL

4

charge

LHLH

BS

Column Read

ILLEGAL

4

L HH L

X

X

Burst Termination ILLEGAL

L HHH

X

X

No Operation

Continue the Burst

HXXX

X

X

Device Deselect

Continue the Burst

LLLL

L L LH

OP Code

X

X

Mode Register Set ILLEGAL

Auto or Self Refresh ILLEGAL

LLHL

BS

X

Precharge

ILLEGAL

4

L LHH

BS Row Address Bank Activate

ILLEGAL

4

Write with Auto

Precharge

L

H

L

L

BS

Column Write

ILLEGAL

4

LHLH

BS

Column Read

ILLEGAL

4

L HH L

X

X

Burst Termination ILLEGAL

L HHH

X

X

No Operation

Continue the Burst

HXXX

X

X

Device Deselect

Continue the Burst

LLLL

OP Code

Mode Register Set ILLEGAL

L L LH

X

X

Auto or Self Refresh ILLEGAL

LLHL

BS

X

Precharge

No Operation; Bank(s) idle after tRP

L LHH

BS Row Address Bank Activate

ILLEGAL

4

Precharging L H L L

BS

Column Write

ILLEGAL

4

LHLH

BS

Column Read

ILLEGAL

4

Row

Activating

L HH L

L HHH

HXXX

LLLL

L L LH

LLHL

L LHH

LHL L

LHLH

L HH L

L HHH

HXXX

X

X

Burst Termination

X

X

No Operation

X

X

Device Deselect

OP Code

Mode Register Set

X

X

Auto or Self Refresh

BS

X

Precharge

BS Row Address Bank Activate

BS

Column Write

BS

Column Read

X

X

Burst Termination

X

X

No Operation

X

X

Device Deselect

No Operation; Bank(s) idle after tRP

No Operation; Bank(s) idle after tRP

No Operation; Bank(s) idle after tRP

ILLEGAL

ILLEGAL

ILLEGAL

ILLEGAL

ILLEGAL

ILLEGAL

No Operation; Row Active after tRCD

No Operation; Row Active after tRCD

No Operation; Row Active after tRCD

4

4, 10

4

4

1. CKE is assumed to be active (high) in the previous cycle for all entries. The Current State is the state of the bank that the Command is

being applied to.

2. All Banks must be idle; otherwise, it is an illegal action.

3. If CKE is active (high) the SDRAM will start the Auto (CBR) Refresh operation, if CKE is inactive (low) than the Self Refresh mode is

entered.

4. The Current State refers to only one of the banks. If BS selects this bank then the action is illegal. If BS selects the bank not being refer-

enced by the Current State then the action may be legal depending on the state of that bank.

5. If CKE is inactive (low) then the Power Down mode is entered; otherwise there is a No Operation.

6. The minimum and maximum Active time (tRAS) must be satisfied.

7. The RAS to CAS Delay (tRCD) must occur before the command is given.

8. Column address A10 is used to determine if the Auto Precharge function is activated.

9. The command must satisfy any bus contention, bus turn around, and/or write recovery requirements.

10. The command is illegal if the minimum bank to bank delay time (tRRD) is not satisfied.

REV 1.1

10/01

11

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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