DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MUBW30-12E6K Просмотр технического описания (PDF) - IXYS CORPORATION

Номер в каталоге
Компоненты Описание
производитель
MUBW30-12E6K
IXYS
IXYS CORPORATION IXYS
MUBW30-12E6K Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MUBW30-12E6K
Ouput Inverter T1 - T6
Ratings
Symbol Definitions
Conditions
min. typ. max. Unit
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
VGE(th)
ICES
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
ICM
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
tSC
(SCSOA)
RthJC
RthCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Output Inverter D1 - D6
h
Symbol
VRRM
IF25
p Definitions
max. repetitve reverse voltage
forward current
IF80
VF
forward voltage
IRM
trr
Erec(off)
RthJC
RthCH
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
continuous
transient
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
TC = 25°C
IC = 30 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
IC = 0.6 mA; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 20 A
t
inductive load
VCE = 600 V; IC = 20 A
u VGE = ±15 V; RG = 68 W
TVJ = 125°C
o RBSOA; VGE = ±15 V; RG = 68 W
- L = 100 µH; clamped induct. load
VCEmax = VCES - LS·di/dt
VCE = 900 V; VGE = ±15 V;
e RG = 68 W; non-repetitive
(per IGBT)
TVJ = 125°C
TVJ = 125°C
a s(per IGBT)
Conditions
IF = 30 A; VGE = 0 V
VR = 600 V
diF /dt = -500 A/µs
IF = 30 A; VGE = 0 V
(per diode)
(per diode)
TVJ = 150°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
4.5
min.
3.1
3.8
0.6
1180
100
210
110
320
180
4.1
1.5
45
1200
±20
±30
30
21
130
3.6
6.5
1
200
10
0.95
0.35
Ratings
typ. max.
1200
49
32
2.9
2.0
27
150
tbd
0.9
0.3
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
µs
K/W
K/W
Unit
V
A
A
V
V
A
ns
µJ
K/W
K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
-9

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]