MTY16N80E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 800 Vdc, VGS = 0 Vdc)
(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
V(BR)DSS
800
—
—
570
Vdc
—
—
mV/°C
IDSS
µAdc
—
—
10
—
—
100
IGSS
—
—
100
nAdc
VGS(th)
Vdc
2.0
3.0
4.0
—
9.0
—
mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 8.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 16 Adc)
(VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C)
Forward Transconductance (VDS ≥ 15 Vdc, ID = 8.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 400 Vdc, ID = 16 Adc,
VGS = 10 Vdc,
RG = 4.7 Ω)
(VDS = 400 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 16 Adc, VGS = 0 Vdc)
(IS = 16 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
0.42
0.5
Ohm
Vdc
—
7.3
9.4
—
—
8.4
10
15
—
mhos
—
7220 10110
pF
—
508
710
—
65
130
—
52
100
ns
—
112
200
—
122
240
—
100
200
—
146
200
nC
—
39
—
—
48
—
—
53
—
Vdc
—
0.9
1.2
—
0.79
—
Reverse Recovery Time
(See Figure 14)
(IS = 16 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
—
995
—
ns
—
428
—
—
567
—
—
20
—
µC
nH
—
4.5
—
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
nH
—
13
—
2
Motorola TMOS Power MOSFET Transistor Device Data