AT28C64B-20 Просмотр технического описания (PDF) - Atmel Corporation
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AT28C64B-20 Datasheet PDF : 20 Pages
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AT28C64B
DC Characteristics
Symbol Parameter
Condition
Min
ILI
Input Load Current
VIN = 0 V to VCC + 1 V
ILO
Output Leakage Current
VI/O = 0 V to VCC
ISB1
VCC Standby Current CMOS CE = VCC - 0.3 V to VCC + 1 V Com., Ind.
ISB2
VCC Standby Current TTL
CE = 2.0 V to VCC + 1 V
ICC
VCC Active Current
f = 5 MHz; IOUT = 0 mA
VIL
Input Low Voltage
VIH
Input High Voltage
2.0
VOL
Output Low Voltage
IOL = 2.1 mA
VOH
Output High Voltage
IOH = -400 µA
2.4
Max
10
10
100
2
40
0.8
0.40
Units
µA
µA
µA
mA
mA
V
V
V
V
AC Read Characteristics
Symbol
tACC
tCE(1)
tOE(2)
tDF(3)(4)
tOH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or
Address, whichever occurred first
AT28C64B-15
Min
Max
150
150
0
70
0
50
0
AT28C64B-20
Min
Max
200
200
0
80
0
55
0
AT28C64B-25
Min
Max
250
250
0
100
0
60
0
Units
ns
ns
ns
ns
ns
AC Read Waveforms(1)(2)(3)(4)
ADDRESS
ADDRESS VALID
CE
OE
OUTPUT
tCE
tOE
tACC
HIGH Z
tDF
tOH
OUTPUT VALID
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
5
0270I–PEEPR–08/03
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