AT28C64B-25 Просмотр технического описания (PDF) - Atmel Corporation

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AT28C64B-25

64K(8K x 8) Parallel EEPROM Page Write and Software Data Protection

Atmel Corporation 

Block Diagram

access times to 150 ns with power dissipation of just 220 mW. When the device is dese-

lected, the CMOS standby current is less than 100 µA.

The AT28C64B is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow writ-

ing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64

bytes of data are internally latched, freeing the address and data bus for other opera-

tions. Following the initiation of a write cycle, the device will automatically write the

latched data using an internal control timer. The end of a write cycle can be detected by

DATA POLLING of I/O7. Once the end of a write cycle has been detected, a new access

for a read or write can begin.

Atmel’s AT28C64B has additional features to ensure high quality and manufacturability.

The device utilizes internal error correction for extended endurance and improved data

retention characteristics. An optional software data protection mechanism is available to

guard against inadvertent writes. The device also includes an extra 64 bytes of

EEPROM for device identification or tracking.

VCC

GND

OE

WE

CE

ADDRESS

INPUTS

OE, CE and WE

LOGIC

Y DECODER

X DECODER

DATA INPUTS/OUTPUTS

I/O0 - I/O7

DATA LATCH

INPUT/OUTPUT

BUFFERS

Y-GATING

CELL MATRIX

IDENTIFICATION

Absolute Maximum Ratings*

Temperature Under Bias................................ -55°C to +125°C

Storage Temperature ..................................... -65°C to +150°C

All Input Voltages

(including NC Pins)

with Respect to Ground .................................-0.6 V to +6.25 V

All Output Voltages

with Respect to Ground ...........................-0.6 V to VCC + 0.6 V

Voltage on OE and A9

with Respect to Ground ..................................-0.6 V to +13.5V

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

device reliability

2 AT28C64B

0270I–PEEPR–08/03

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