AT28C64B-25 Просмотр технического описания (PDF) - Atmel Corporation
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AT28C64B-25 Datasheet PDF : 20 Pages
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Features
• Fast Read Access Time – 150 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
• Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum (Standard)
2 ms Maximum (Option)
– 1 to 64-byte Page Write Operation
• Low Power Dissipation
– 40 mA Active Current
– 100 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling and Toggle Bit for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• Single 5 V ±10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28C64B is a high-performance electrically-erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28C64B
Pin Configurations
Pin Name
A0 - A12
Function
Addresses
CE
OE
WE
I/O0 - I/O7
NC
DC
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PLCC
Top View
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
I/O0 13
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
OE 1
A11 2
A9 3
A8 4
NC 5
WE 6
VCC 7
NC 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
PDIP, SOIC
Top View
NC 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
I/O0 11
I/O1 12
I/O2 13
GND 14
28 VCC
27 WE
26 NC
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
TSOP
Top View
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
Rev. 0270I–PEEPR–08/03
1
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