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MT16VDDF6464H(2008) Просмотр технического описания (PDF) - Micron Technology

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Компоненты Описание

производитель

MT16VDDF6464H
(Rev.:2008)

DDR SDRAM SODIMM

Micron Technology

MT16VDDF6464H Datasheet PDF : 15 Pages

1 2 3 4 5 6 7 8 9 10 Next Last

512MB, 1GB (x64, DR) 200-Pin DDR SODIMM

Features

Table 1: Key Timing Parameters

Speed

Grade

-40B

-335

-265

Industry

Data Rate (MT/s)

tRCD

tRP

Nomenclature

CL = 3

CL = 2.5

CL = 2

(ns)

tRC

(ns)

Notes

PC3200

400

333

266

PC2700

–

333

266

PC2100

–

266

200

Notes: 1. The values of tRCD and tRP for -335 modules show 18ns to align with industry specifications;

actual DDR SDRAM device specifications are 15ns.

Table 2: Addressing

Parameter

Refresh count

Row address

Device bank address

Device configuration

Column address

Module rank address

512MB

8K (A0–A12)

4 (BA0, BA1)

256Mb (32 Meg x 8)

1K (A0–A9)

2 (S0#, S1#)

1GB

8K (A0–A12)

4 (BA0, BA1)

512Mb (64 Meg x 8)

2K (A0–A9, A11)

2 (S0#, S1#)

Table 3:

Part Numbers and Timing Parameters – 512MB

Base device: MT46V32M8,1 256Mb DDR SDRAM

Part Number2

MT16VDDF6464HG-40B__

MT16VDDF6464HY-40B__

MT16VDDF6464(L)HG-335__

MT16VDDF6464HI-335

MT16VDDF6464HY-335__

MT16VDDF6464(L)HG-265__

MT16VDDF6464HY-265__

Module

Density

512MB

Configuration

64 Meg x 64

Module

Bandwidth

3.2 GB/s

2.7 GB/s

2.1 GB/s

Memory Clock/

Data Rate

5.0ns/400 MT/s

6.0ns/333 MT/s

7.5ns/266 MT/s

Clock Cycles

(CL-tRCD-tRP)

3-3-3

2.5-3-3

Notes:

1. Data sheets for the base devices can be found on Micron’s Web site.

2. All part numbers end with a two-place code (not shown) that designates component and

PCB revisions. Consult factory for current revision codes.

Example: MT16VDDF12864HY-335F2.

PDF: 09005aef80a77a90/Source: 09005aef80a646bc

DDF16C64_128x64_L_H.fm - Rev. G 8/08 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

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