HGTG30N60C3 Просмотр технического описания (PDF) - Intersil
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HGTG30N60C3 Datasheet PDF : 6 Pages
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HGTG30N60C3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector To Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate To Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate To Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG30N60C3
600
63
30
252
±20
±30
60A at 600V
208
1.67
100
-40 to 150
260
4
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector To Emitter Breakdown Voltage
Emitter To Collector Breakdown Voltage
Collector To Emitter Leakage Current
CollectorTo Emitter Saturation Voltage
BVCES
BVECS
ICES
VCE(SAT)
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = BVCES
VCE = BVCES
IC = IC110, VGE = 15V
Gate To Emitter Threshold Voltage
Gate To Emitter Leakage Current
Switching SOA
VGE(TH)
IGES
SSOA
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC,
RG = 3Ω,
VGE = 15V,
L = 100µH
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
VCE(PK) = 480V
VCE(PK) = 600V
600
-
-
V
15
25
-
V
-
-
250
µA
-
-
2.0
mA
-
1.5 1.8
V
-
1.7 2.0
V
3.0 5.2 6.0
V
-
-
±100
nA
200
-
-
A
60
-
-
A
Gate To Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
RθJC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 3Ω,
L = 100µH
VGE = 15V
VGE = 20V
-
8.1
-
V
-
162 180
nC
-
216 250
nC
-
40
-
ns
-
45
-
ns
-
320 400
ns
-
230 275
ns
-
1050
-
µJ
-
2500
-
µJ
-
-
0.6
oC/W
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3 was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total turn-off energy loss. Turn-On losses include
diode losses.
2
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