20N120CND Просмотр технического описания (PDF) - Intersil
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20N120CND Datasheet PDF : 7 Pages
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HGTG20N120CND
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = 20A
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit (Figure 20)
IEC = 20A
IEC = 20A, dIEC/dt = 200A/µs
IEC = 2A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
-
21
26
ns
-
17
22
ns
-
225
270
ns
-
340
400
ns
-
3.8
5.0
mJ
-
4.6
5.3
mJ
-
2.6
3.2
V
-
62
75
ns
-
44
55
ns
-
-
0.32
oC/W
-
-
0.75
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
70
VGE = 15V
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH
100
80
60
40
20
0
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
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