MS3383 Просмотр технического описания (PDF) - Advanced Power Technology
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MS3383 Datasheet PDF : 3 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
Features
• GOLD METALIZATION
• POUT = 1.0 W MINIMUM
• 3.0 GHz
• GP = 7.0 dB
• INFINITE VSWR CAPABLE @ RATED CONDITIONS
• HERMETIC PACKAGE
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS3383 is a common base, hermetically sealed silicon NPN
microwave power transistor. This device is designed for Class C
applications in the 1 - 3 GHz frequency range. Gold metallization
and emitter ballasting provide long term reliability and superior
ruggedness.
MS3383
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS
VCC
IC
TJ
TSTG
Parameter
Power Dissipation*
Collector-Supply Voltage*
Device Current*
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
*Applies only to rated RF amplifier operation
Value
6.0
30
200
200
-65 to +200
25
Unit
W
V
mA
ºC
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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