MS2201 Просмотр технического описания (PDF) - Advanced Power Technology
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MS2201 Datasheet PDF : 5 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 1025-1150 MHz
• GOLD METALLIZATION
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• Pout = 2 W MINIMUM
• GP= 9 dB
DESCRIPTION:
The MS2201 is a silicon NPN, Class C microwave transistor
designed for Class C driver applications under DME or IFF pulse
conditions. This device is capable of withstanding an infinite load
VSWR at any phase angle under rated conditions.
MS2201
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
PDISS
VCC
Power Dissipation
Collector-Supply Voltage
TJ
Junction Temperature
IC
Device Current
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance*
Value
10
37
200
250
-65 to +200
10
Unit
W
V
ºC
mA
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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