MS1454 Просмотр технического описания (PDF) - Advanced Power Technology

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MS1454

RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS

Advanced Power Technology 

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF AND MICROWAVE TRANSISTORS

806-960 MHZ CELLULAR BASE STATIONS

MS1454

Features

• Gold Metallization

• Diffused Emitter Ballasting

• Internal Input Matching

• Designed for Linear Operation

• High Saturated Power Capability

• Common Emitter Configuration

• POUT

• Gain

30 W MIN

7.5 dB

• Efficiency 55% (Typ)

• 20:1 VSWR

• Overdrive Survivability 5 dB

DESCRIPTION:

The MS1454 gold/metallized epitaxial silicon NPN planar transistor

uses diffused emitter ballast resistors for high linearity class AB

operation in cellular base station applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

PDISS

Total Power Dissipation

IC

Collector Current

Tj

Junction Temperature

Tstg

Storage Temperature

Value

48

25

3.5

88

7.5

+200

-65 to +150

THERMAL DATA

RTH(j-c)

Junction-Case Thermal Resistance

2

Unit

V

V

V

W

A

°C

°C

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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