CRF-22010-001 Просмотр технического описания (PDF) - Cree, Inc
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CRF-22010-001 Datasheet PDF : 8 Pages
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10 W SiC RF Power MESFET
CRF-22010-001
CRF-22010-101
CASE STYLE 001
CRF-22010-001
Features
• 12 dB Small Signal Gain
• 10 W Minimum P1dB
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 3 GHz Operation
• High Efficiency
Applications
• Class A, AB Amplifiers
• TDMA, EDGE, CDMA, and W-CDMA
• Broadband Amplifiers
• CATV Amplifiers
• MMDS
Description
Cree’s CRF-22010 is a silicon carbide (SiC) RF power Metal-Semiconduc-
tor Field-Effect Transistor (MESFET). SiC has superior properties com-
pared to silicon or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity, and higher thermal conductivity.
SiC MESFETs offer greater power density and increased reliability com-
pared to Si and GaAs transistors.
CASE STYLE 101
CRF-22010-101
Angled lead = Gate
Non-angled lead = Drain
Case/Flange = Source
Absolute Maximum Ratings (not simultaneous) at 25°C Case Temperature
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation
Storage Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Soldering Temperature
Symbol
VDSS
VGS
PD
TSTG
TJ
RqJC
TS
Rating
120
-25, +3
62.5
-40, 150
250
3.6
250
Units
VDC
VDC
W
°C
°C
°C/W
°C
© Cree, Inc. 2003
Rev 0.91 - March 28, 2003
Specifications subject to change without notice
http://www.cree.com/
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