MRF9030 Просмотр технического описания (PDF) - Freescale Semiconductor
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MRF9030 Datasheet PDF : 16 Pages
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TYPICAL CHARACTERISTICS
22
50
21 Gps
45
20
40
η
19
35
18 IMD
−30
−10
17
−32
−12
16 IRL
15
14
VDD = 26 Vdc
−34
−14
Pout = 30 W (PEP)
IDQ = 250 mA
−36
−16
Two−Tone, 100 kHz Tone Spacing
−38
−18
930
935
940
945
950
955
960
f, FREQUENCY (MHz)
Figure 4. Class AB Broadband Circuit Performance
21.5
21
IDQ = 375 mA
20.5
300 mA
20
250 mA
19.5
200 mA
19
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
18.5
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Power Gain versus Output Power
−15
−20
−25
−30
−35
IDQ = 200 mA
−40
−45
−50
−55
0.1
250 mA
1
300 mA
VDD = 26 Vdc
375 mA f1 = 945 MHz
f2 = 945.1 MHz
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus
Output Power
−10
VDD = 26 Vdc
−20 IDQ = 250 mA
f1 = 945 MHz
−30 f2 = 945.1 MHz
−40
3rd Order
−50
5th Order
−60
7th Order
−70
−80
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
22
60
20
Gps
50
18
40
16
30
14
20
12
η
10
0.1
1
VDD = 26 Vdc
10
IDQ = 250 mA
f = 945 MHz
0
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Power Gain and Efficiency versus
Output Power
RF Device Data
Freescale Semiconductor
MRF9030MR1 MRF9030MBR1
5
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