MRF9030 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MRF9030

945 MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs

Freescale Semiconductor 

Table 5. Electrical Characteristics (Tc = 25°c Unless Otherwise Noted)

Characteristic

Symbol

Min

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

IDSS

—

IDSS

—

IGSS

—

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 100 μAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 250 mAdc)

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 0.7 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics

VGS(th)

2

VGS(Q)

3

VDS(on)

—

gfs

—

Input Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture)

Ciss

—

Coss

—

Crss

—

Two - Tone Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

Gps

18

Two - Tone Drain Efficiency

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

η

37

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IMD

—

Input Return Loss

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IRL

—

Two - Tone Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Two - Tone Drain Efficiency

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Gps

—

η

—

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IMD

—

Input Return Loss

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IRL

—

Typ

—

—

—

2.9

3.8

0.23

2.7

49

27

1.2

20

41

- 31

- 13

20

40.5

- 31

- 12

Max

Unit

10

μAdc

1

μAdc

1

μAdc

4

Vdc

5

Vdc

0.4

Vdc

—

S

—

pF

—

pF

—

pF

—

dB

—

%

- 28

dBc

-9

dB

—

dB

—

%

—

dBc

—

dB

MRF9030MR1 MRF9030MBR1

2

RF Device Data

Freescale Semiconductor

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